Abstrakt

In the present study, a novel PbS:Ni (10 at. %) nanostructure was synthesised via a simple solid state reaction method at 400 °C and constant pressure. X-ray diffraction analysis confirms the formation of a face-centred cubic crystalline structure. Preferential growth is observed along the (311) plane direction. The calculated crystallite size of PbS:Ni (10 at. %) from XRD analysis was found to be equal to 65 nm. Scanning electron microscopy revealed the formation of nanostructured PbS:Ni (10 at. %) materials. Its band gap of ~ 2.14 eV was determined by photoluminescence spectroscopy. Raman spectroscopy was used to confirm the structure of the material. Electrical properties were studied by I-V characteristic at ± 5 V and a temperature range from 100 K to 300 K. The lnV-lnI plot showed a non-linear behaviour of PbS:Ni (10 at. %). Impedance spectroscopy is applied at temperatures from 100 K to 300 K in a frequency range from 20 Hz to 2 MHz to observe the dielectric response of PbS:Ni (10 at. %). As obtained, ε′ ~ 26 and conductivity in the order of 10–4 S · cm–1 were obtained at all temperatures above 104 Hz. The results obtained from photoluminescence spectroscopy, I-V characteristics and impedance spectroscopy confirm that PbS:Ni (10 at. %) can be considered as a suitable material for optoelectronic applications.